JPS6042823A - 薄膜形成方法 - Google Patents

薄膜形成方法

Info

Publication number
JPS6042823A
JPS6042823A JP58150978A JP15097883A JPS6042823A JP S6042823 A JPS6042823 A JP S6042823A JP 58150978 A JP58150978 A JP 58150978A JP 15097883 A JP15097883 A JP 15097883A JP S6042823 A JPS6042823 A JP S6042823A
Authority
JP
Japan
Prior art keywords
film
reactor
thin film
wall
boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58150978A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0211012B2 (en]
Inventor
Takahiko Moriya
守屋　孝彦
Saburo Nakada
中田　三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58150978A priority Critical patent/JPS6042823A/ja
Priority to DE8484304479T priority patent/DE3461302D1/de
Priority to EP84304479A priority patent/EP0134645B1/en
Publication of JPS6042823A publication Critical patent/JPS6042823A/ja
Priority to US06/780,242 priority patent/US4650698A/en
Publication of JPH0211012B2 publication Critical patent/JPH0211012B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3607—Coatings of the type glass/inorganic compound/metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3636—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing silicon, hydrogenated silicon or a silicide
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP58150978A 1983-08-19 1983-08-19 薄膜形成方法 Granted JPS6042823A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58150978A JPS6042823A (ja) 1983-08-19 1983-08-19 薄膜形成方法
DE8484304479T DE3461302D1 (en) 1983-08-19 1984-06-29 Method of forming thin film
EP84304479A EP0134645B1 (en) 1983-08-19 1984-06-29 Method of forming thin film
US06/780,242 US4650698A (en) 1983-08-19 1985-09-26 Method of forming a thin film of a metal or metal compound on a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58150978A JPS6042823A (ja) 1983-08-19 1983-08-19 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS6042823A true JPS6042823A (ja) 1985-03-07
JPH0211012B2 JPH0211012B2 (en]) 1990-03-12

Family

ID=15508605

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58150978A Granted JPS6042823A (ja) 1983-08-19 1983-08-19 薄膜形成方法

Country Status (4)

Country Link
US (1) US4650698A (en])
EP (1) EP0134645B1 (en])
JP (1) JPS6042823A (en])
DE (1) DE3461302D1 (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008509071A (ja) * 2004-08-10 2008-03-27 ジョイント ソーラー シリコン ゲーエムベーハー ウント コンパニー カーゲー ガス分解用反応装置の生産方法

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4741928A (en) * 1985-12-27 1988-05-03 General Electric Company Method for selective deposition of tungsten by chemical vapor deposition onto metal and semiconductor surfaces
DE3709066A1 (de) * 1986-03-31 1987-10-01 Toshiba Kawasaki Kk Verfahren zum erzeugen eines duennen metallfilms durch chemisches aufdampfen
US4732801A (en) * 1986-04-30 1988-03-22 International Business Machines Corporation Graded oxide/nitride via structure and method of fabrication therefor
DE3751755T2 (de) * 1986-06-30 1997-04-03 Nihon Sinku Gijutsu K K Verfahren und Vorrichtung zum Abscheiden aus der Gasphase
EP0252667B1 (en) * 1986-06-30 1996-03-27 Nihon Sinku Gijutsu Kabushiki Kaisha Chemical vapour deposition methods
US4800105A (en) * 1986-07-22 1989-01-24 Nihon Shinku Gijutsu Kabushiki Kaisha Method of forming a thin film by chemical vapor deposition
GB2195663B (en) * 1986-08-15 1990-08-22 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor
US5169680A (en) * 1987-05-07 1992-12-08 Intel Corporation Electroless deposition for IC fabrication
US4749597A (en) * 1987-10-19 1988-06-07 Spectrum Cvd, Inc. Process for CVD of tungsten
JPH03126820U (en]) * 1990-04-02 1991-12-20
JPH047410U (en]) * 1990-04-27 1992-01-23
JPH04109085U (ja) * 1990-09-04 1992-09-21 株式会社池口工業 物品包装容器
US5342652A (en) * 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
EP0595054A1 (en) * 1992-10-30 1994-05-04 Applied Materials, Inc. Method for processing semiconductor wafers at temperatures exceeding 400 degrees C.
JPH07176484A (ja) * 1993-06-28 1995-07-14 Applied Materials Inc 窒化アルミニューム面を有するサセプタをサセプタの浄化後珪化タングステンで処理することによって半導体ウエハ上に珪化タングステンを一様に堆積する方法
US6090706A (en) * 1993-06-28 2000-07-18 Applied Materials, Inc. Preconditioning process for treating deposition chamber prior to deposition of tungsten silicide coating on active substrates therein
US5482749A (en) * 1993-06-28 1996-01-09 Applied Materials, Inc. Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
JPH07172809A (ja) * 1993-10-14 1995-07-11 Applied Materials Inc 基板上への珪化タングステンコーティングの堆積操作の事前に堆積チャンバのアルミニウムを有する表面を処理する予備処理プロセス
JP3744554B2 (ja) * 1994-09-09 2006-02-15 キヤノンアネルバ株式会社 薄膜形成方法
JP3070660B2 (ja) * 1996-06-03 2000-07-31 日本電気株式会社 気体不純物の捕獲方法及び半導体製造装置
US5824365A (en) * 1996-06-24 1998-10-20 Micron Technology, Inc. Method of inhibiting deposition of material on an internal wall of a chemical vapor deposition reactor
US6022587A (en) * 1997-05-13 2000-02-08 Applied Materials, Inc. Method and apparatus for improving film deposition uniformity on a substrate
US5795824A (en) * 1997-08-28 1998-08-18 Novellus Systems, Inc. Method for nucleation of CVD tungsten films
US6071573A (en) * 1997-12-30 2000-06-06 Lam Research Corporation Process for precoating plasma CVD reactors
US6019839A (en) * 1998-04-17 2000-02-01 Applied Materials, Inc. Method and apparatus for forming an epitaxial titanium silicide film by low pressure chemical vapor deposition
US6638819B1 (en) * 2000-11-17 2003-10-28 Newport Fab, Llc Method for fabricating interfacial oxide in a transistor and related structure
US7282183B2 (en) * 2001-12-24 2007-10-16 Agilent Technologies, Inc. Atmospheric control in reaction chambers
GB0512253D0 (en) * 2005-06-16 2005-07-27 Pilkington Plc Coated glass pane
DE102012106518A1 (de) * 2012-07-18 2014-01-23 H2 Solar Gmbh Beschichtung von Substraten mit Siliciden und deren Oxide

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2884894A (en) * 1956-11-02 1959-05-05 Metallgesellschaft Ag Apparatus for producing hard coatings on workpieces
DE1086510B (de) * 1957-05-11 1960-08-04 Bosch Gmbh Robert Verfahren zur Herstellung von Metallueberzuegen durch Vakuumbedampfen
US3115957A (en) * 1959-02-18 1963-12-31 Eitel Mccullough Inc Art of sealing quartz to metal
US4100330A (en) * 1977-03-28 1978-07-11 Ppg Industries, Inc. Method for coating glass with silicon and a metal oxide and resulting product
JPS53141318A (en) * 1977-05-17 1978-12-09 Nippon Sheet Glass Co Ltd Heat radiation reflecive glass
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
US4391846A (en) * 1979-04-05 1983-07-05 The United States Of America As Represented By The United States Department Of Energy Method of preparing high-temperature-stable thin-film resistors
JPS56155589A (en) * 1980-05-06 1981-12-01 Nippon Electric Co Metallizing method
JPS5776833A (en) * 1980-09-04 1982-05-14 Applied Materials Inc Heat resistant metal depositing method and product thereof
US4359490A (en) * 1981-07-13 1982-11-16 Fairchild Camera & Instrument Corp. Method for LPCVD co-deposition of metal and silicon to form metal silicide
DE3141567C2 (de) * 1981-10-20 1986-02-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008509071A (ja) * 2004-08-10 2008-03-27 ジョイント ソーラー シリコン ゲーエムベーハー ウント コンパニー カーゲー ガス分解用反応装置の生産方法

Also Published As

Publication number Publication date
EP0134645B1 (en) 1986-11-12
US4650698A (en) 1987-03-17
JPH0211012B2 (en]) 1990-03-12
DE3461302D1 (en) 1987-01-02
EP0134645A1 (en) 1985-03-20

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